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电子元器件详细规范.3DA98型NPN硅高频大功率晶体管
Detail specification for electronic components.Type 3DA98 NPN silicon high-frequency power transistor
参考页数：13P.;A4
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电子元器件详细规范.3DA505型L波段硅脉冲功率晶体管
Detail specification for electronic components.Type 3DA505 L band silicon pulse power transistor
参考页数：11P.;A4
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电子元器件详细规范.3DA504型S波段硅脉冲功率晶体管
Detail specification for electronic components.Type 3DA504 S band silicon pulse power transistor
参考页数：11P.;A4
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小功率LED芯片技术规范
Technical specification for low power light-emitting diode chips
参考页数：19P.;A4
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高压元件和组件的安全要求
Safety requirements of high voltage components and sets
参考页数：8P.;A4
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半导体激光二极管测试方法
Measuring methods for semiconductor laser diodes
参考页数：35P.;A4
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半导体红外发射二极管测量方法 第13部分:辐射功率温度系数
Measuring method for semiconductor infrared-emitting diode.Part 13: Temperature coefficient for radiant power
参考页数：6P.;A4
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半导体红外发射二极管测量方法 第12部分:峰值发射波长和光谱辐射带宽
Measuring method for semiconductor infrared-emitting diode.Part 12: Peak-emission wavelength and spectral radiant bandwidth
参考页数：8P.;A4
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半导体红外发射二极管测量方法 第11部分:响应时间
Measuring method for semiconductor infrared-emitting diode.Part 11: Response time
参考页数：8P.;A4
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半导体红外发射二极管测量方法 第10部分:调制带宽
Measuring method for semiconductor infrared-emitting diode.Part 10: Modulation bandwidth
参考页数：6P.;A4
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