|
半导体分立器件.CS140型硅N沟道MOS耗尽型场效应晶体管.详细规范
Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor
价格:¥4.00
|
|
|
|
|
|
半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
价格:¥4.00
|
|
|
|
|
|
半导体分立器件.CS0536型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS0536 GaAs microwave power FET
价格:¥5.00
|
|
|
|
|
|
半导体分立器件.3DG218型硅微波低噪声晶体管详细规范
Semiconductor discrete devices.Detail specification for type 3DG218 Silicon microwave low-noise transistor
价格:¥3.00
|
|
|
|
|
|
交流粉末电致发光显示器件空白详细规范(可供认证用)
Blank detail specification for a.c. powder electro luminescent display devices
价格:¥0.00
|
|
|
|
|
|
半导体分立器件.2DV8CP型硅微波检波二极管详细规范
Semiconductor discrete device.Detail specification for type 2DV8CP silicon microwave detector diode
价格:¥0.00
|
|
|
|
|
|
半导体分立器件.CSO467型砷化镓微波场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
价格:¥0.00
|
|
|
|
|
|
半导体分立器件.CS0529型砷化镓微波功率场效应晶体管详细规范
semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor
价格:¥0.00
|
|
|
|
|
|
半导体分立器件.CS0558型砷化镓微波双栅场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
价格:¥0.00
|
|
|
|
|
|
半导体分立器件.GF1121型LED指示灯详细规范
Semiconductor optoelectronic devices.Detail specification for type GF1121 Light-emitting diode indicate lamp
价格:¥0.00
|
|
|
|
|