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硅单晶中III-V族杂质的光致发光测试方法
Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
参考页数:10P.;A4
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硅衬底中氮浓度的二次离子质谱测量方法
Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
参考页数:8P.;A4
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短基线红外吸收光谱法测量硅中间隙氧含量
Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry
参考页数:9P.;A4
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锗单晶体中间隙氧含量的红外吸收测定方法
Determination method for interstitial atomic oxygen content of germanium by infrared abaorption
参考页数:6P.;A4
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辐射探测器用高纯锗晶体试验程序
Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors
参考页数:30P.;A4
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半导体工艺用材料测试. 液体中痕量元素测定. 第3部分: 使用电感耦合等离子体质谱法 (ICP-MS) 测定高纯度硝酸中的31种元素
Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
参考页数:19P.;A4
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半导体工艺材料检验.液体中痕量元素测定.用原子吸收光谱测定法测定硝酸溶剂中银、金、钙、铜、铁、钾和钠的含量
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS
参考页数:8P.;A4
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半导体工艺用材料的检验.液体中粒子分析的试验方法.第1部分:粒子的显微镜测定
Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
参考页数:4P.;A4
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半导体工艺材料的检验.液体中颗粒分析的试验方法.第3部分:光学粒子计数器校正
Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
参考页数:6P.;A4
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半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第2部分:二氧化硅涂层.光学法
Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
参考页数:2P.;A4
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